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| 6R1MBI75P-160 Diode Module with Brake Diode:1600V / 75A, IGBT:1400A/50A Features * Compact Package * P.C. Board Mount Module * Converter Diode Bridge Dynamic Brake Circuit Diode Module Applications * Inverter for Motor Drive * AC and DC Servo Drive Amplifier * Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unless without specified) Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average output current One cycle surge current I2t Operation junction temperature Collector-Emitter voltage Gate-Emitter voltage Collector current Symbol VRRM VRSM IO IFSM I2t Tj VCES VGES IC ICP Collector power disspation Repetitive peak reverse voltage Operation junction temperature Storage junction temperature Isolation voltage Mounting screw torque PC VRRM Tj Tstg Viso 50Hz/60Hz sine wave Tc=115C From rated load From rated load Condition Rating 1600 1760 75 600 1440 -40 to +125 1400 20 50 35 100 70 240 1400 +150 -40 to +125 3000 2.0 to 2.5 Unit V V A A A 2s C V V A A W V C C V N*m Converte DC 1ms 1 device Tc=25C Tc=75C Tc=25C Tc=75C Brake AC : 1 minute M5 screw Electrical characteristics (Tj=25C unless otherwise specified) Item Fofward voltage Reverse current Zero gate voltage Collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Turn-on time Turn-off time Reverse current Co. Symbol VFM IRRM ICES IGES VCE(sat) ton tr toff tf IRRM Condition Tj=25C, IFM=75A Tj=150C, VR=VRRM VGE=0V. VCE=1400V VCE=0V. VGE=20V VGE=15V. IC=35A Vcc=800V Ic=35A VGE=15V RG=33ohm Min. Typ. 2.4 0.35 0.25 0.45 0.08 Max. 1.35 15 1.0 200 2.8 1.2 0.6 1.0 0.3 1.0 Unit V mA mA nA V s Brake mA Thermal characteristics Item Thermal resistance Symbol Rth(j-c) Condition Per total loss Per each device Brake IGBT (1 device) with thermal compound Converter Min. Typ. Max. 0.16 0.96 0.70 0.08 Unit C/W Thermal Resistance(Case to fine) Rth(c-f) C/W Diode Module Forward Characteristics 250 6R1MBI75P-160 O utp ut C urre nt - T o ta l L o s s 80 max 70 typ 200 Forward Current IF (A ) 60 50 40 30 20 50 150deg 25deg Total Loss (W) 1.4 150 100 10 0 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 0 20 40 60 80 Forward Voltage O u t p u t C u rre n t Io (A ) O u tp u t C u r re n t - C a s e T e m p e ra tu r e 130 S u rg e C u rre n t 700 120 600 Case Temperature Tc(deg.C) 110 Peak Surge Current IFSM(A) 500 100 400 90 300 80 200 70 60 100 50 0 20 40 60 80 0 0 .0 1 0 .1 1 O u t p u t C u rre n t Io ( A ) T im e Transient Thermal Impedance 1 [ B ra ke ] Tra nsie nt The rm a l Im p e d a nce 10 FW D Zth(j-c)(t) (deg.C/W) Zth(j-c)(deg.C/W) 0.1 1 IG BT 0.01 0.1 0.001 0.001 0.01 0.1 1 10 0.01 0.001 0.01 0.1 1 10 Tim e ( ) Tim e (s ec ) Diode Module [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 25C (typ.) 80 VGE= 20V 15V 12V 80 6R1MBI75P-160 [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 125C (typ.) VGE= 20V 15V 12V 60 60 Collector current : Ic [ A ] Collector current : Ic [ A ] 10V 40 10V 40 20 20 8V 0 0 1 2 3 4 5 0 0 1 2 3 4 8V 5 Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] [ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 80 Tj= 25C Tj= 125C 10 [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C (typ.) 60 Collector - Emitter voltage : VCE [ V ] 8 Collector current : Ic [ A ] 6 40 4 Ic= 70A 2 Ic= 35A Ic= 17.5A 20 0 0 1 2 3 4 5 0 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ] 10000 [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C 1000 [ Brake ] Dynamic Gate charge (typ.) Vcc=800V, Ic=35A, Tj= 25C 25 Capacitance : Cies, Coes, Cres [ pF ] 600 15 1000 Coes 400 10 200 5 Cres 100 0 5 10 15 20 25 30 35 0 0 100 200 300 0 400 Collector - Emitter voltage : VCE [ V ] Gate charge : Qg [ nC ] Gate - Emitter voltage : VGE [ V ] Cies Collector - Emitter voltage : VCE [ V ] 800 20 Diode Module Outline Drawings, mm 6R1MBI75P-160 90 78.5 4- O 6.1 C3 2- O5.5 11.75 7 14 7 0.5 21 7 + 23.5 16 - G E C 11 K 11.75 O 2.5 14 14 28.5 11 32 3 6 1.5 3.4 JAPAN O 2.1 2 x t1 R1 6R1MBi100P-160 6R1MBI75P-160 Equivalent Circuit Schematic K C G E 13 17 20.4 |
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